Professor Park Jin Hong developed a controllable nondegenerate p-type doping technique on tungsten diselenide for p-channel 2D transistors by adjusting the concentration of octadecyltrichlorosilane (OTS).
The controlled p-doping levels are between 2.1×
and 5.2×
in the nondegenerate regime, where the performance parameters of tungsten diselenide-based electronic and optoelectronic devices can be properly designed or optimized(threshold voltage, on-off currents, field-effect mobility increases and photoresponsivity and detectivity decreases as the doping level increases).
The p-doping effect showed by tungsten diselenide is sustained in surrounding air for a long time showing small changes in the device performance.
“We expect that our controllable p-doping method will make
it possible to successfully integrate future layered semiconductor devices.” he said.
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